Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2005-08-17
2008-08-05
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S184000, C257S257000, C257S290000, C257SE31058
Reexamination Certificate
active
07408207
ABSTRACT:
A device manufacturing method, including: a first process for providing the plural elements on the original substrate via a separation layer in a condition where terminal sections are exposed to a surface on an opposite side to the separation layer; a second process for adhering the surface where the terminal sections of the elements to be transferred on the original substrate are exposed, via conductive adhesive, to a surface of the final substrate on a side where conductive sections for conducting with the terminal sections of the elements are provided; a third process for producing exfoliation in the separation layer between the original substrate and the final substrate; and a fourth process for separating the original substrate from which the transfer of elements has been completed, from the final substrate.
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Hashimoto Takashi
Kamakura Tomoyuki
Takakuwa Atshushi
Utsunomiya Sumio
Louie Wai-Sing
Oliff & Berridg,e PLC
Seiko Epson Corporation
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