Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Outside periphery of package having specified shape or...
Reexamination Certificate
2008-06-27
2010-11-16
Lebentritt, Michael S (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Outside periphery of package having specified shape or...
C257S684000, C257S697000, C257S724000, C257SE21056, C257SE21561, C257SE21564, C257SE23004, C257SE25012, C257SE29022
Reexamination Certificate
active
07834452
ABSTRACT:
A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a100plane of the single-crystal silicon, the third side extending in a first area in a111plane of the single-crystal silicon. The third side extends in a second area in a110plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.
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Baumann Helmut
Kaelberer Arnd
Scheuerer Roland
Weber Heribert
Kenyon & Kenyon LLP
Lebentritt Michael S
Robert & Bosch GmbH
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