Device isolation structures of semiconductor devices and...

Details Device isolation structures of semiconductor devices and... Device isolation structures of semiconductor devices and...

2006-05-09

2006-05-09

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C438S424000

Reexamination Certificate

active

07042062

ABSTRACT:
A device isolation structure of a semiconductor device may be a silicon wafer, a trench formed in the silicon wafer to have a predetermined depth, a first thermal oxide layer formed to an inner surface of the trench, a pad oxide layer formed on the silicon wafer, a second thermal oxide layer formed on the pad oxide layer and having a round side adjacent to an opening of the trench, and a field oxide layer filled in the trench having the first thermal oxide layer.

REFERENCES:
patent: 5620930 (1997-04-01), Hey et al.
patent: 5696019 (1997-12-01), Chang
patent: 5834360 (1998-11-01), Tesauro et al.
patent: 6046483 (2000-04-01), Tesauro et al.
patent: 6232649 (2001-05-01), Lee
patent: 6291298 (2001-09-01), Williams et al.
patent: 6403486 (2002-06-01), Lou
patent: 6451654 (2002-09-01), Lin et al.

Affiliated with

Also associated with

Rating

Device isolation structures of semiconductor devices and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Device isolation structures of semiconductor devices and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device isolation structures of semiconductor devices and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3527671