Device isolation for semiconductor devices

Details Device isolation for semiconductor devices Device isolation for semiconductor devices

2006-05-23

2006-05-23

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S437000, C438S445000

Reexamination Certificate

active

07049206

ABSTRACT:
Exemplary embodiments of the present invention disclose a semiconductor assembly having at least one isolation structure formed. The semiconductor assembly comprises: a first trench in a semiconductive substrate; a second trench extending the overall trench depth in the semiconductive substrate by being aligned to the first trench; and an insulation material substantially filling the first and second trenches. The isolation structure separates a non-continuous surface of a conductive region.

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