Device isolation for semiconductor devices

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reexamination Certificate

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Details

C257S499000

Reexamination Certificate

active

07358596

ABSTRACT:
Exemplary embodiments of the present invention disclose a semiconductor assembly having at least one isolation structure formed. The semiconductor assembly comprises: a first trench in a semiconductive substrate; a second trench extending the overall trench depth in the semiconductive substrate by being aligned to the first trench; and an insulation material substantially filling the first and second trenches. The isolation structure separates a non-continuous surface of a conductive region.

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