Device isolation by etching trench in dielectric on substrate an

Details Device isolation by etching trench in dielectric on substrate an Device isolation by etching trench in dielectric on substrate an

1988-08-18

1989-12-12

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 67, 437 89, H01L 2120, H01L 2176

Patent

active

048867632

ABSTRACT:
A method of forming dielectric isolation regions includes the steps of forming a first dielectric layer having a groove on a semiconductor substrate, forming a second dielectric film on the entire surface including the groove, and forming dielectric isolation regions by utilizing the second dielectric film formed on side walls of the grooves as an isolation region.

REFERENCES:
patent: 4502914 (1985-03-01), Trumpp et al.

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