Device isolation area structure in semiconductor device

Details Device isolation area structure in semiconductor device Device isolation area structure in semiconductor device

1994-03-01

1995-07-25

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257 52, 257501, 257505, 257507, 257519, 257349, H01L 2704, H01L 2701, H01L 2712, H01L 2713

Patent

active

054364957

ABSTRACT:
A device isolation area structure in a semiconductor device is composed of two layers of a first device isolation film formed by selectively oxidizing a surface of a silicon substrate, and a second device isolation region formed in a single crystal silicon film covering the first device isolation film. A guard band region may be formed within the semiconductor substrate and immediately below the first device isolation film so as to be in contact with the first device isolation film. The device isolation area structure is suitable to high integration of the semiconductor device and provides less possibilities of occurrence of crystal defects.

REFERENCES:
patent: 4199384 (1980-04-01), Hsu
patent: 4570325 (1986-02-01), Higuchi
patent: 4682408 (1987-07-01), Takebayashi
patent: 4720756 (1988-01-01), Takafuji et al.
patent: 4868136 (1989-09-01), Ravaglia
patent: 5005056 (1991-04-01), Motai et al.
patent: 5017980 (1991-05-01), Gill et al.
patent: 5034340 (1991-07-01), Tanaka et al.
patent: 5241211 (1993-08-01), Tashiro

Affiliated with

Also associated with

Rating

Device isolation area structure in semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Device isolation area structure in semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device isolation area structure in semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-741573