Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-04-21
2010-12-21
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S350000, C257SE29151
Reexamination Certificate
active
07855381
ABSTRACT:
A resin material having a small relative dielectric constant is used as a layer insulation film114. The resin material has a flat surface. A black matrix or masking film for thin film transistors is formed thereon using a metal material. Such a configuration prevents the problem of a capacity generated between the masking film and a thin film transistor.
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Fish & Richardson P.C.
Ngo Ngan
Semiconductor Energy Laboratory Co,. Ltd.
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