Device including means for preventing tungsten silicide lifting,

Details Device including means for preventing tungsten silicide lifting, Device including means for preventing tungsten silicide lifting,

1996-11-07

1998-05-05

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257754, 257755, H01L 2348, H01L 2352, H01L 2940

Patent

active

057478821

ABSTRACT:
In a semiconductor device, a layer of nitrogen doped polysilicon is applied to a gate oxide in turn provided on a semiconductor body, and then a silicide film is applied to the polysilicon layer. The nitrogen in the polysilicon layer inhibits growth of native oxide on the polysilicon layer prior to the application of silicide, and at subsequent high temperature processing steps, so that the problem of the silicide layer lifting from the polysilicon layer due to this native oxide growth is avoided during subsequent high temperature processing of the device.

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