Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection
Reexamination Certificate
2009-05-26
2011-11-08
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Device protection
C257S529000, C257S665000, C257SE21592, C438S132000, C438S281000
Reexamination Certificate
active
08053809
ABSTRACT:
A device is provided that in one embodiment includes a substrate having a first region and a second region, in which a semiconductor device is present on a dielectric layer in the first region of the substrate and a resistive structure is present on the dielectric layer in the second region of the substrate. The semiconductor device may include a semiconductor body and a gate structure, in which the gate structure includes a gate dielectric material present on the semiconducting body and a metal gate material present on the gate dielectric material. The resistive structure may include semiconductor material having a lower surface is in direct contact with the dielectric layer in the second region of the substrate. The resistive structure may be a semiconductor containing fuse or a polysilicon resistor. A method of forming the aforementioned device is also provided.
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Cheng Kangguo
Doris Bruce B.
Zhang Ying
Abate Esq. Joseph P.
International Business Machines - Corporation
Pert Evan
Scully , Scott, Murphy & Presser, P.C.
Wilson Scott R
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