Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means
Patent
1989-04-27
1990-07-17
Sikes, William L.
Radiant energy
Ionic separation or analysis
Static field-type ion path-bending selecting means
357 4, 357 30, 357 65, 25037001, H01L 4902
Patent
active
049424424
ABSTRACT:
Radiation-induced effects discovered in layered structures of conductor and semiconductor materials are utilized in radiation-sensitive devices such as, e.g., highly linear as well as highly nonlinear position sensors. Such devices includes a structure of alternating layers of conductor and semiconductor materials, and electrical contacts are provided between which a radiation-induced voltage appears. Among suitable layer materials are silicon and titanium, and resulting devices are sensitive to electromagnetic as well as to particle radiation.
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"Position Sensitive Light Detectors with Standard Silicon-Planar Technology", Sensors and Actuators, vol. 4, B. Schmidt, 1983, pp. 439-446.
Bethea Clyde G.
Brasen Daniel
Levine Barry F.
Willens Ronald H.
American Telephone and Telegraph Company AT&T Bell Laboratories
Businger Peter A.
Holloway B. R. R.
Sikes William L.
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