Device, in particular a semiconductor device, for processing two

Details Device, in particular a semiconductor device, for processing two Device, in particular a semiconductor device, for processing two

1997-12-09

2000-11-14

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 43, 372 45, 372 48, 257 21, 257 22, 257 98, 257184, H01S 319, H01L 2906

Patent

active

061480150

ABSTRACT:
A common InP semiconductor substrate device includes a laser emitter H1 for emitting waves having a first wavelength such as 1,300 nm, a photodiode H2 for receiving and detecting waves having a second wavelength such as 1,550 nm, and a separator G absorbing the waves having the first wavelength, the separator being interposed between the laser emitter H1 and the photodiode G for protecting the photodiode against the waves having the first wavelength. An absorption measurement mechanism Q delivers a signal iG representative of the power of the waves absorbed by the separator G, to make it possible to regulate operation of the laser emitter H1. The semiconductor substrate device is particularly applicable to implementing end devices to be installed on subscriber premises for subscribers to optical fiber interactive local area networks.

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U. Koren et al, "Strained-Layer Multiple Quantum Well Distributed Bragg Reflector Lasers witha Fast Monitoring Photodiode", Applied Physics Letters, vol. 58, No. 12, Mar. 25, 1991, pp. 1239-1240.

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