Device having strain induced region of altered bandgap

Details Device having strain induced region of altered bandgap Device having strain induced region of altered bandgap

1987-11-25

1988-09-20

Edlow, Martin H.

357 30, 357 13, 357 16, H01L 2712

Patent

active

047729244

ABSTRACT:
A strained layer superlattice comprising Ge.sub.x Si.sub.1-x layers interleaved with Si layers is an excellent photodetector at infrared wavelengths due to the large shift in bandgap caused by the strain in the superlattice.

REFERENCES:
patent: 3626257 (1971-12-01), Esozhi
patent: 4212019 (1980-07-01), Wataze
patent: 4616241 (1986-10-01), Biefeld

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