Device having dual etch stop liner and reformed silicide...

Details Device having dual etch stop liner and reformed silicide... Device having dual etch stop liner and reformed silicide...

2011-04-19

2011-04-19

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S384000, C257S768000

Reexamination Certificate

active

07928571

ABSTRACT:
The present invention provides a semiconductor device having dual silicon nitride liners and a reformed silicide layer and related methods for the manufacture of such a device. The reformed silicide layer has a thickness and resistance substantially similar to a silicide layer not exposed to the formation of the dual silicon nitride liners. A first aspect of the invention provides a method for use in the manufacture of a semiconductor device comprising the steps of applying a first silicon nitride liner to a silicide layer, removing a portion of the first silicon nitride liner, reforming a portion of the silicide layer removed during the removal step, and applying a second silicon nitride liner to the silicide layer.

REFERENCES:
patent: 4316209 (1982-02-01), Ho et al.
patent: 5972785 (1999-10-01), Shishiguchi et al.
patent: 6140232 (2000-10-01), Lin et al.
patent: 7052946 (2006-05-01), Chen et al.
patent: 2006/0121665 (2006-06-01), Fang et al.
Chidambarrao et al., U.S. Appl. No. 10/905,027, filed Dec. 10, 2004, Office Action Summary, Dec. 4, 2006. 9 pages.
Chidambarrao et al., U.S. Appl. No. 10/905,027, filed Dec. 10, 2004, Office Action Summary, Jun. 5, 2007, 8 pages.
Chidambarrao et al., U.S. Appl. No. 10/905,027, filed Dec. 10, 2004, Office Action Summary, Jan. 30, 2008, 8 pages.
Chidambarrao et al., U.S. Appl. No. 10/905,027, filed Dec. 10, 2004, Notice of Allowance and Fee(s) Due, Jun. 30, 2008, 7 pages.

Affiliated with

Also associated with

Rating

Device having dual etch stop liner and reformed silicide... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Device having dual etch stop liner and reformed silicide..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device having dual etch stop liner and reformed silicide... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2627270