Device having dual etch stop liner and protective layer

Details Device having dual etch stop liner and protective layer Device having dual etch stop liner and protective layer

2007-08-28

2008-11-04

Pham, Thanh V (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S641000, C257S649000, C257S760000, C257SE21148, C438S508000

Reexamination Certificate

active

07446395

ABSTRACT:
The present invention provides a semiconductor device having dual nitride liners, a silicide layer, and a protective layer beneath one of the nitride liners for preventing the etching of the silicide layer. A first aspect of the invention provides a semiconductor device comprising a protective layer adjacent a first device, a first silicon nitride liner over the protective layer, a second silicon nitride liner adjacent a second device, and a first silicide layer adjacent the first device and a second silicide layer adjacent the second device, wherein a thickness is substantially the same in the first and second silicide layers.

REFERENCES:
patent: 5258333 (1993-11-01), Shappir et al.
patent: 7052946 (2006-05-01), Chen et al.
patent: 2004/0029323 (2004-02-01), Shimizu et al.
patent: 2006/0079046 (2006-04-01), Yang et al.
Definition of Substantially from Merriam-Webster on-line Dictionary.

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