Device having an electrically erasable non-volatile memory and p

Details Device having an electrically erasable non-volatile memory and p Device having an electrically erasable non-volatile memory and p

1995-11-06

1997-12-09

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518529, 36518518, G11C 1134

Patent

active

056967187

ABSTRACT:
Device having an electrically erasable, non-volatile memory and its production process. In a storage area the device has at least one memory cell (12) of the floating grid type with a source (16) and a drain (18) separated by a channel region (14). According to the invention, the device also comprises means (44,38) for applying a memory cell erasing voltage to the channel region (14), independently of the memory cells of adjacent areas, as a result of a complete electrical isolation or insulation of each area. Application to the production of non-volatile memories which can be carried in satellites for replacing EPROM memories.

REFERENCES:
patent: 4783766 (1988-11-01), Samachisa et al.
patent: 5243559 (1993-09-01), Murai
patent: 5313086 (1994-05-01), Jinbo
patent: 5374564 (1994-12-01), Bruel
patent: 5794127 (1993-12-01), Nakayama et al.
Kevin Yallup, "The Implementation Of A Commercial Thick Film SOI Process", published May 1992, page Nos. 43-63.
"Comparison of Current Flash EEPROM Erasing Methods: Stability and How to Control" by K. Yoshikawa et al., IEDM 92, Feb. 1992, pp. 595 to 598.
"A 90ns One-Million Erase/Program Cycle 1-MBit Flash Memory" by Virgil Niles Kynett et al., IEEE Journal of Solid-State Circuits, vol. 24, No. 5, Oct. 1989, pp. 1259-1263.

Affiliated with

Also associated with

Rating

Device having an electrically erasable non-volatile memory and p does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Device having an electrically erasable non-volatile memory and p, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device having an electrically erasable non-volatile memory and p will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1613144