Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2004-06-10
2008-03-11
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S211000, C257S296000, C257S298000, C257S300000, C257S307000, C257S308000, C257S309000, C257S312000, C257S313000, C257S532000, C257S534000, C257S535000, C257S759000, C257S760000
Reexamination Certificate
active
07342314
ABSTRACT:
The present invention provides a device having a useful structure which is arranged on a substrate and has a useful structure side edge. In addition, an auxiliary structure is arranged on the substrate adjacent to the useful structure, the auxiliary structure having an auxiliary structure side edge, wherein the useful structure side edge is opposite to the auxiliary structure side edge separated by a distance, and wherein the auxiliary structure useful structure distance is dimensioned such that a form of the useful structure side edge or a form of the substrate next to the useful structure side edge differs from a form in a device where there is no auxiliary structure.
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Bachmann Jens
Goller Klaus
Grueneberg Dirk
Schwab Reiner
Maginot Moore & Beck
Soward Ida M.
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