Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – active junction...
Patent
1997-11-25
1999-03-16
Wallace, Valencia Martin
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, active junction...
257 49, 257 55, 257 56, H01L 2904
Patent
active
058833986
ABSTRACT:
A device having a switch comprises a chromium layer and an adjacent semiconductor layer. The fraction of voids in the chromium layer is less than 10%, preferably less than 2%. The chromium layer in the device comprises traces of neon with a concentration of less than 0.1 at. %. Chromium layers are deposited on a substrate by means of a sputter deposition process. By using neon as the working gas at pressures of less than 1 Pa, preferably in the range from 0.2 Pa to 0.5 Pa, the sputter-deposited chromium layers are substantially free of internal stress and have a density which is approximately equal to that of bulk chromium.
REFERENCES:
patent: 5751016 (1998-05-01), Vink et al.
Vink Teunis J.
Walrave Willem
Fox John C.
Martin Wallace Valencia
U.S. Philips Corporation
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