Device having a switch comprising a chromium layer

Details Device having a switch comprising a chromium layer Device having a switch comprising a chromium layer

1996-02-14

1998-05-12

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, active junction...

257 49, 257 53, 257 56, H01L 2904

Patent

active

057510164

ABSTRACT:
A device having a switch comprises a chromium layer and an adjacent semiconductor layer. The fraction of voids in the chromium layer is less than 10%, preferably less than 2%. The chromium layer in the device comprises traces of neon with a concentration of less than 0.1 at. %.
Chromium layers are deposited on a substrate by means of a sputter deposition process. By using neon as the working gas at pressures of less than 1 Pa, preferably in the range from 0.2 Pa to 0.5 Pa, the sputter-deposited chromium layers are substantially free of internal stress and have a density which is approximately equal to that of bulk chromium.

REFERENCES:
patent: 5256565 (1993-10-01), Bernhardt et al.
"A Spectroellipsometric Investigation of the Effect of Argon Partial Pressure on Sputtered Palladium Films" by Brian T. Sullivan et al, J. Vac. Sci. Technol.A 5(6), Nov./Dec. 1987, 1987 American Vacuum Society, pp. 3399-3407.
"Handbook of Optical Constants of Solids II" by E.D. Palik, Academic Press, Inc., New York 1985, relevant pp. 374-385 no month.

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