Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-05-30
1998-09-01
Whitehead, Jr., Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 67, 257347, 257349, 257302, 257401, 257329, H01L 2976, H01L 31036, H01L 2701, H01L 2712
Patent
active
058013970
ABSTRACT:
A semiconductor device includes an insulating support. A strip of semiconductor material has two ends in contact with the insulating support and a midsection extending between the ends. A dielectric layer encircles the midsection, and a conductive layer encircles the dielectric layer. The conductive layer has a substantially constant width such that a gate electrode formed within the conductive layer is fully self-aligned with drain and source regions formed within the ends.
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Carlson David V.
Galanthay Theodore E.
Jorgenson Lisa K.
SGS-Thomson Microelectronics Inc.
Whitehead Jr. Carl W.
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