Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1998-10-21
1999-11-30
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257109, 257173, 257497, H01L 2900, H01L 2974, H01L 31111
Patent
active
059947608
ABSTRACT:
The present invention relates to an assembly of two pairs of diodes in a single semiconductor substrate of a first type of conductivity, the first pair including a first diode in series with a second diode, the second pair including a third diode in series with a fourth diode, the two pairs of diodes being arranged in parallel. Each of the first and third diodes includes neighboring regions of distinct types of conductivity formed in a lightly-doped well of the second type of conductivity, these wells being separated; each of the second and fourth diodes includes separated regions of distinct types of conductivity; and metallizations connect the electrodes of the diodes to form the desired series-to-parallel assembly.
REFERENCES:
patent: 5311042 (1994-05-01), Anceau
patent: 5401985 (1995-03-01), Anceau
patent: 5646433 (1997-07-01), Jimenez
patent: 5747837 (1998-05-01), Iwase et al.
patent: 5880488 (1999-03-01), Yu
Patent Abstracts of Japan, vol. No. 095, No. 011, Dec. 26, 1995, & JP 07 221269, Aug. 18, 1995.
Patent Abstracts of Japan, vol. No. 010, No. 005, (E-372), Jan. 10, 1986, & Jp 60 169110, Sep. 2, 1985.
Ngo Ngan V.
STMicroelectronics S.A.
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