Glass manufacturing
Patent
1995-11-14
1997-06-24
Crane, Sara W.
Glass manufacturing
257349, 257351, 257 66, 257 69, H01L 2712
Patent
active
056419805
ABSTRACT:
It is an object to obtain a semiconductor device with the LDD structure having both operational stability and high speed and a manufacturing method thereof. A high concentration region (11) with boron of about 1.times.10.sup.18 /cm.sup.3 introduced therein is formed extending from under a channel formation region (4) to under a drain region (6) and a source region (6') in a silicon substrate (1). The high concentration region (11) is formed in the surface of the silicon substrate (1) under the channel formation region (4), and is formed at a predetermined depth from the surface of the silicon substrate (1) under the drain region (6) and the source region (6'). A low concentration region (10) is formed in the surface of the silicon substrate (1) under the drain region (6) and the source region (6'). The formation of the high concentration region only in the surface of the semiconductor substrate under the channel formation region surely suppresses an increase in the leakage current and an increase in the drain capacitance.
REFERENCES:
patent: 4697198 (1987-09-01), Komori et al.
patent: 5294821 (1994-03-01), Iwamatsu
patent: 5359219 (1994-10-01), Hwang
patent: 5440161 (1995-08-01), Iwamatsu et al.
patent: 5506436 (1996-04-01), Hayashi et al.
Inoue Yasuo
Joachim Hans-Oliver
Yamaguchi Yasuo
Crane Sara W.
Hardy David B.
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Device having a high concentration region under the channel does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Device having a high concentration region under the channel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device having a high concentration region under the channel will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-150593