Device having a charge transfer device, MOSFETs, and bipolar tra

Details Device having a charge transfer device, MOSFETs, and bipolar tra Device having a charge transfer device, MOSFETs, and bipolar tra

1991-01-16

1993-06-15

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

257370, 257215, 257506, 257544, H01L 2702, H01L 2978

Patent

active

052201902

ABSTRACT:
A semiconductor device according to the present invention has a semiconductor body of a first conductivity type, three islands of a second conductivity type, formed in the surface of the semiconductor body. Two wells of the first conductivity are formed in the first and second islands. The device further has a charge transfer device which back gate is formed of the first well, an insulated-gate FET of the first conductivity type which back gate is formed of the second island, an insulated-gate FET of the second conductivity type which back gate is formed of the second well, and a bipolar transistor which collector is formed of the third island. The first island surrounds the first well which serves as back gate of the charge transfer device, and blocks the noise generated in the first well. Hence, the other islands are free from the influence of the noise.

REFERENCES:
patent: 4253168 (1981-02-01), Petrosky et al.
patent: 4314857 (1982-02-01), Aitken
patent: 4646124 (1987-02-01), Zunino
Electronics, Oct. 28, 1976, pp. 8E and 10E, "One process adapts CCD devices to MOS, bipolar peeripheral circuits".

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