Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-07-03
2000-04-11
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257511, 257512, 257525, 257555, 257556, 257569, 257574, 257575, 257576, H01L 218238
Patent
active
060491310
ABSTRACT:
A method and the device produced by the method of selective refractory metal growth/deposition on exposed silicon, but not on the field oxide is disclosed. The method includes preconditioning a wafer in a DHF dip followed by the steps of 1) selectively depositing a refractory metal on the exposed surfaces of the silicon substrate by reacting a refractory metal halide with the exposed surfaces of said silicon substrate; 2) limiting silicon substrate consumption by reacting the refractory metal halide with a silicon containing gas; and 3) further increasing the refractory metal thickness by reacting the refractory metal halide with hydrogen. Through an adequate pretreatment and selection of the parameters of 1) temperature; 2) pressure; 3) time; 4) flow and 5) flow ratio during each of the deposition steps, this invention adequately addresses the difficulties of uneven n+ versus p+ (source/drain) growth, deep consumption/encroachment by the refractory metal into silicon regions (e.g., worm holes), poor adhesion, uncontrolled selectivity and uneven morphology.
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Brodsky Stephen Bruce
Conti Richard Anthony
Subbanna Seshadri
Abate Joseph P.
Abraham Fetsum
International Business Machines - Corporation
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