Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Reexamination Certificate
2011-04-19
2011-04-19
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
C257S025000, C257S030000, C257SE29168
Reexamination Certificate
active
07928561
ABSTRACT:
A system is provided. The system includes a device that includes top and bottom thermally conductive substrates positioned opposite to one another, wherein a top surface of the bottom thermally conductive substrate is substantially atomically flat and a thermal blocking layer disposed between the top and bottom thermally conductive substrates. The device also includes top and bottom electrodes separated from one another between the top and bottom thermally conductive substrates to define a tunneling path, wherein the top electrode is disposed on the thermal blocking layer and the bottom electrode is disposed on the bottom thermally conductive substrate.
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Definition of “abut” as cited on Dictionary.com, refrenced to the Random House Dictionary.
Definition of “adjacent” as cited on Dictionary.com, referenced to the Random House Dictionary.
Hishinuma et al., “Measurements of cooling by room-temperature thermionic emission across a nanometer gap”, J. Appl. Phys., vol. 94, No. 7, Oct. 1, 2003, pp. 4690-4696.
Ronggui Yang, Arvind Narayanaswamy, and Gang Chen; “Surface-Plasmon Coupled Nonequilibrium Thermoelectric Refrigerators and Power Generators”, Journal of Computational and Theoretical Nanoscience, vol. 2, No. 1, pp. 75-87, 2005. 14Pages.
Arik Mehmet
Weaver Stanton Earl
General Electric Company
Huber Robert
Le Thao X
Patnode Patrick K.
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