Device for the protection of an integrated circuit against elect

Details Device for the protection of an integrated circuit against elect Device for the protection of an integrated circuit against elect

1993-04-27

1996-08-20

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

257546, 257111, 257362, 361100, H01L 2900

Patent

active

055481345

ABSTRACT:
In a device for the protection of integrated circuits against electrostatic discharges, the protection structure comprises a thyristor with an N+ region connected to the ground, a P- substrate, a deep N- well forming a gate region, and a P+ region connected to an external connection pad to be protected. The gate region is connected by a low-value resistor (with a maximum value of a few ohms) to the pad. This resistor increases the current for which the thyristor gets triggered and eliminates certain risks of the destruction of the circuit.

REFERENCES:
patent: 4890187 (1989-12-01), Tailliet et al.
patent: 4939616 (1990-07-01), Rountree
patent: 5003371 (1991-03-01), Tailliet et al.
patent: 5012317 (1991-04-01), Rountree
patent: 5016078 (1991-05-01), Tailliet
patent: 5032741 (1991-07-01), Zanders
patent: 5272371 (1993-12-01), Bishop et al.
U.S. Ser. No. 07/683245, Apr. 10, 1991.
U.S. Ser. No. 07/892941, Jun. 3, 1992.
U.S. Ser. No. 07/999527, Dec. 29, 1992.
Patent Abstracts of Japan, vol. 8, No. 161, Jul. 1984.
Patent Abstracts of Japan, vol. 15, No. 159, Apr. 22, 1991.
Patent Abstracts of Japan, vol. 11, No. 309, Oct. 8, 1987.

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