Device for the multiplication of charge carriers by an avalanche

Details Device for the multiplication of charge carriers by an avalanche Device for the multiplication of charge carriers by an avalanche

1987-12-09

1990-03-06

James, Andrew J.

Electric lamp and discharge devices

With temperature modifier

For lead-in-seal or stem protection

357 4, 357 30, 313501, 313542, H01L 29205, H01L 2714, H01L 3100

Patent

active

049070428

ABSTRACT:
A device for the multiplication of charge carriers of a given type by an avalanche phenomenon includes:

REFERENCES:
patent: 4053920 (1977-10-01), Enstrom
patent: 4170018 (1979-10-01), Runge
patent: 4208667 (1980-06-01), Chang
patent: 4383269 (1983-05-01), Capasso
patent: 4694318 (1987-09-01), Capasso et al.
patent: 4755860 (1988-07-01), Allam et al.
Dohler, "Solid State Superlattices", Sci. Amer., Nov. 1983, pp. 144-151.
"New Avalanche Multiplication Phenomenon in Quantum well Super-lattices: Evidence of Impact Ionization Across the band-edge discontinuity", F. Capasso, J. Allam, A. Y. Cho, K. Mohammed, R. J. Malik, A. L. Hutchinson, and D. Sivco, Applied Physics Letter 48 (19) May 12, 1986.
"The Delta-Doped Field-Effect Transistor", Erdmann F. Schubert et al., IEEE Transaction on Electron Devices, vol. ED-33, No. 5, May 1986.
"Preparation and Properties of a New GaAs Sawtooth Doping Superlattice", K. Ploog et al., Sep. 1985.

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