Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-01-17
1999-02-09
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
359248, 359278, 359 1, H01L 310304, H01L 31101
Patent
active
058698442
ABSTRACT:
Device for the detection and processing of optical radiations, comprising at least one quantum well having asymmetric composition, said well consisting of a stack of layers of materials having differing gaps.
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Electronics Letters, vol. 23, No. 20, 24 Sep. 1987, K. Wakita et al.: "GaInAs/InP wave-guide multiple-quantum-well optical modulator with 9dB on/off ratio", pp. 1067-1069.
Applied Physics Letters, vol. 47, No. 12, 15 Dec. 1985, American Institute of Physics, K.W. Goossen et al: "Grating enhanced quantum well detector", pp. 1257-1259.
Applied Physics Letters, vol. 45, No. 11, 1 Dec. 1984, American Institute of Physics, F. capasso et al.: "Peseudo-quaternary GaInAsP semiconductors: A new Ga0.47In0.53As/InP graded gap superlattice and its applications to avalanche photodiodes", pp. 1193-1195.
IEEE Journal of Quantum Electronics, vol. QE-19, No. 5, May 1983, IEEE, M.K. Gurnick et al.: "Synthetic nonlinear semiconductors", pp. 791-794.
Applied Physics Letters, vol. 51, No. 25, 21 Dec. 1987, American Institute of Physics, J. Khurgin: "Second-order susceptibility of asymmetric coupled quantum well structures", pp. 2100-2102.
"Principles of the Theory of Solids" by J.M. Ziman, pp. 280-281.
"Quantum Semiconductor Structures" Claude Weisbuch and Borge Vinter, pp. 86-87.
"Observation of nonlinear optical rectification at 10.6 .mu.m in compositionally asymmetrical AlGaAs multiquantum wells" by E. Rosencher et al, pp. 1597-1599.
"Electronic properties of two-dimensional systems" by Tsuneya Ando, pp. 450-451.
Bois Philippe
Rosencher Emmanuel
"Thomson-CSF"
Guay John
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