Device for sensing data in a multi-bit memory cell using a multi

Details Device for sensing data in a multi-bit memory cell using a multi Device for sensing data in a multi-bit memory cell using a multi

1999-10-26

2000-05-30

Tran, Andrew Q.

Static information storage and retrieval

Floating gate

Particular biasing

36518503, 3651852, 36518906, 36518907, 36518909, G11C 1606

Patent

active

060698217

ABSTRACT:
A device and method for sensing data in a multi-bit memory cell of a memory cell array unit is provided where each memory cell has at least two threshold voltage levels. The device can include a multistep current source unit to provide quantized voltages, each having a width smaller than a threshold voltage distribution in a selected memory cell, according to a current flowing through the selected memory cell. An analog-to-digital converter compares the quantized voltages from the multistep current source unit with a plurality of reference voltages to provide a state of the memory cell in binary form. The device and method for sensing data in the multi-bit memory cell uses the quantized voltages to increase sensing reliability, increases sensing speed and increases a gap between the quantized voltages relative to the threshold voltage distribution.

REFERENCES:
patent: 4964079 (1990-10-01), Devin
patent: 5003510 (1991-03-01), Kamisaki
patent: 5163021 (1992-11-01), Mehrotra et al.
patent: 5268870 (1993-12-01), Harari

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