Device for semiconductor integrated circuits

Details Device for semiconductor integrated circuits Device for semiconductor integrated circuits

1983-09-30

1985-10-08

Edlow, Martin H.

357 4, 357 55, H01L 2978

Patent

active

045463760

ABSTRACT:
A device for semiconductor integrated circuits having a silicon single crystal film formed on a sapphire substrate by hetero epitaxy and isolated islands having side planes. One of the side planes makes an angle of 65.degree. or more with the surface of the sapphire substrate at a part at least more than half thickness from the surface of the silicon single crystal film and makes an angle of 55.degree. or less at a residual thickness.

REFERENCES:
patent: 3586932 (1971-06-01), Kokosa
patent: 3643136 (1972-02-01), Tuft
patent: 4054895 (1977-10-01), Ham
patent: 4110780 (1978-08-01), Cornu

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