Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Patent
1991-07-03
1993-03-02
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
257425, H01L 2722, H01L 2982, H01L 2996, H01L 4300
Patent
active
051912236
ABSTRACT:
A method and device are disclosed for converting electronic signals into magnetic signals in DMS materials by generating carriers in selected regions of the materials. The carriers comprise either holes or electrons and the concentration of the carriers in the DMS device is electronically and consequently reversibly controlled by varying the voltage supplied to the device. A carrier concentration-induced conversion of the DMS device is obtained in an area defined by an electrode so that the device of a selected area of the device is changed from one magnetic state to another magnetic state. A superexchange interaction through the carriers in the host DMS material causes a transition from one magnetic phase to another when the carrier concentration exceeds a critical value.
REFERENCES:
patent: 4823177 (1989-04-01), Prinz et al.
patent: 4966445 (1990-10-01), Takeda
Story, T., et al. "Magnetism and Band Structure of the Semimagnetic Semiconductor Pb-Sn-Mn-Te", Physical Review B, 42(16):477 (1990).
Munekata, H., et al., "Epitaxy of III-V Diluted Magnetic Semiconductor Materials", J. Vac. Sci. Technol. B, 8(2):176 (1990).
Munekata, H., et al., "Diluted Magnetic III-V Semiconductors", Physical Review Letters, 63(17):1849 (1989).
Swagten, H. J. M., et al., "Hole Density and Composition Dependence of Ferromagnetic Ordering in Pb-Sn-Mn-Te", Physical Review B, 37(16):9907 (1988).
Masek, J., et al., "A Tight-Binding Study of the Electronic Structure of MnTe", J. Phys. C., 20(1):59 (1987).
Denissen, C. J. M., et al., "Analysis of Some Magnetic Properties of Diluted Magnetic Semiconductors Including Long-Range Interactions", Solid State Comms., 59(7):503 (1986).
Spalek, J., et al., "Magnetic Susceptibility of Semimagnetic Semiconductors: The High-Temperature Regime and the Role of Superexchange", Physical Review B, 33(5):3407 (1986).
Story, T., et al., "Carrier-Concentration-Induced Ferromagnetism in PbSnMnTe", Physical Review Letters, 56(7):777 (1986).
Furdyna, J. K., "Shallow Centers in Diluted Magnetic Semiconductors", Solid State Comms., 53(12):1097 (1985).
Datta, S., et al., "Diluted Magnetic Semiconductor Superlattices and Heterostructures", Superlattices and Microstructures, 1(4):327 (1985).
Laff, R. A., "Semimetal-Semiconductor Heterojunction Devices", IBM Technical Disclosure Bulletin, 7(5):411 (1964).
Crane Sara W.
International Business Machines - Corporation
James Andrew J.
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