Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-12-22
2010-11-30
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185210
Reexamination Certificate
active
07843737
ABSTRACT:
The reading device enables a non-volatile memory consisting of a matrix of memory cells (TM) to be read. Once the memory cells have been selected to be read in a read cycle controlled by a microprocessor unit, sense amplifiers (4) activated at the start of each cycle supply a binary data word (dx) representing the reading of the selected memory cells. The reading device also comprises time-lag means (3, MF, TF, Cgap) activated at the start of each read cycle. These time-lag means supply a reference signal (rd_mon) that controls the read time of the cells selected independently of the microprocessor unit. This read time is determined so that it is sufficient for reading all the valid data of the selected memory cells in each read cycle.
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Harabech Nadia
Jaeggi Hugo
Theoduloz Yves
EM Microelectronic-Marin S.A.
Griffin & Szipl, P.C.
Nguyen Hien N
Phung Anh
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