Device for pulling silicon single crystal

Details Device for pulling silicon single crystal Device for pulling silicon single crystal

1993-03-23

1995-03-07

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117208, 117216, 117222, C30B 3500

Patent

active

053948297

ABSTRACT:
A device for pulling a silicon single crystal is constructed so as to preclude deposition of a SiO-derived substance on graphite parts inside the device and prevent the graphite parts from deterioration, elongate the duration of continuous use of the device in a great measure, and simplify the disassembly and reassembly of the device.
This device pulls a silicon single crystal in an atmosphere of inert gas by the Czochralski method, which device is chracterized by comprising a crucible 1 for accommodating a molten silicon mass 2, a heater 3 disposed round the periphery of the crucible 1, an outer member 14 forming a pulling chamber 6 for accomodating the crucible 1, an inert gas inlet part 15 disposed in the upper part of the pulling chamber 6, and an inert gas outlet part 16 separated from the inert gas inlet part 15 in the same upper part of the pulling chamber 6.

REFERENCES:
patent: 3261671 (1963-11-01), Jonge et al.
patent: 3453352 (1969-07-01), Goundry
patent: 4141779 (1979-02-01), Hill et al.
patent: 4309241 (1982-01-01), Garavaglia et al.
patent: 4415401 (1983-11-01), Wald et al.
patent: 4443411 (1984-04-01), Kalejs

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