Coating apparatus – Gas or vapor deposition – Crucible or evaporator structure
Patent
1993-11-08
1994-10-18
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Crucible or evaporator structure
118715, 118724, 118725, C23C 1600
Patent
active
053564774
ABSTRACT:
A substrate (2) is formed with a surface layer from a gas phase with a vapour in a device having a reactor chamber (1) and a reservoir (4), which vapour is generated through evaporation of a substance (5) in the reservoir (4) and is conducted to the reactor chamber (1) through a gas line (8) (Chemical Vapour Deposition (CVD)). According to the invention, the vapour is conducted from the reservoir (4) to the reactor chamber (1) in that it is pumped from the reservoir (4) to the reactor chamber (1) by a pump (9) included in the gas line. The use of the pump renders the method very flexible. Thus the vapour flow can be easily adapted through adaptation of a pumping rate associated with the pump. In addition, the vapour flow is not dependent on a process pressure which prevails in the reactor (1).
REFERENCES:
patent: 4436674 (1984-03-01), McMenamin
patent: 4529427 (1985-07-01), French
patent: 4783343 (1988-11-01), Sato
patent: 4842827 (1989-06-01), Graf
patent: 4849259 (1989-07-01), Biro
patent: 4911101 (1990-03-01), Ballingall
Bueker Richard
Miller Paul R.
U.S. Philips Corporation
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