Device for protection against electrostatic discharges on the te

Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

361111, 361118, H02H9/00

Patent

active

059056142

ABSTRACT:
A device for protection against electrostatic discharges on the terminals of a MOS integrated circuit and characterized in that it consists of a first and a second circuit branch coupled between the terminal to be protected and ground. The first circuit branch has two field transistors. The gate of the first field-effect transistor is connected to terminal to be protected, and the gate of the second field-effect transistor is connected to a first resistance of the second circuit branch. The second circuit branch has a third field-effect transistor with its gate terminal connected to ground and a second resistance inserted between the third transistor and the terminal to be protected.

REFERENCES:
patent: 5311391 (1994-05-01), Dungan et al.
patent: 5452171 (1995-09-01), Metz et al.
patent: 5550699 (1996-08-01), Diaz

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Device for protection against electrostatic discharges on the te does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Device for protection against electrostatic discharges on the te, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device for protection against electrostatic discharges on the te will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1764522

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.