Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1992-09-23
1994-09-27
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
505730, 505732, 505734, 505950, 505447, 118715, 118725, 118726, C23C 1600, C23C 1640, C23C 1644
Patent
active
053504534
DESCRIPTION:
BRIEF SUMMARY
DESCRIPTION
The invention relates to a device for producing thin films of mixed metal oxides from organic metal compounds on a substrate.
Because of their high critical temperature, the modern high-temperature superconductors (HTSCs) consisting of mixtures of three and more metal oxides have aroused considerable interest. The HTSCs which are disposed as thin films on support substances (substrates) over a relatively large area have acquired particular significance. Such films can be deposited on suitable substrates by vacuum evaporation, by means of sputtering processes, laser ablation, spin or spray coating, or the so-called chemical vapor deposition (CVD) process. HTSC films of high quality can be produced, in particular, by the CVD process. If narrow substrates, such as wires and filaments, are used, a side and back coating also takes place.
To carry out the chemical vapor deposition process, an evacuable device which comprises three evaporators which are in communication with a heatable reception device for the substrate via a manifold has been disclosed at the International Superconductivity Electronics Conference (ISEC '89) held on Jun. 12 and 13, 1989 in Tokyo [Extended Abstracts of 1989 International Superconductivity Electronics Conference (ISEC '89), pages 425-428]. The organic metal compounds, such as, for example, .beta.-diketone metal chelates of yttrium, barium and copper, are each heated with different intensities in the evaporators, the resultant vapor of these metal compounds is combined with an oxygen stream using argon as carrier gas and pyrolyzed or oxidized at approximately 850.degree. C., and the resultant mixed metal oxides are deposited on the substrate. A disadvantage of this device is the expenditure on control technology for the conveyor gas streams and the heating devices which are necessary for the pipelines between the evaporators and the reception device in order to prevent the condensation of the metal compounds there or to initiate a pyrolysis process prematurely. As a consequence of the dilution resulting from the conveyor gas, the material consumption is high for a deposition rate of not more than 17 nm per minute. In addition, an appreciable portion of the metal compounds decomposes prematurely owing to the long conveyor paths.
It is here that the invention seeks to provide a remedy. The object is achieved by a device in which there is, in an evacuable housing, a truncated pyramidal hollow body reception devices for the metal compounds to be evaporated, which reception devices are provided with guide pipes which project into the hollow interior of the hollow body and are inclined towards the axis of symmetry, whose end there is disposed a heatable reception device for the substrate, and pipes and the end of the pipe.
In addition, the furnaces may be symmetrically disposed around the axis of symmetry of the hollow body. A shutter may be disposed between the hollow body and the heatable reception device for the substrate. As gas feed pipe, a plurality of nozzles or a nozzle ring may also be used instead of a single nozzle. The hollow body and the pipe may be provided with a temperature-control device, i.e. for heating and/or cooling. For the purpose of thermal decoupling, baffle plates may be disposed between the guide pipes.
The advantages achieved by the invention are essentially to be seen in the omission of the conveyor gas and the simple compact construction of the device associated therewith. Furthermore, the material losses which occur in the known device owing to the severe dilution of the vapors with the carrier gas do not apply. Premature pyrolysis of the metal compounds is avoided by the omission of long lines. Deposition rates of 130 nm per minute and over are achieved.
The invention is explained in greater detail below by reference to only one drawing depicting a method of embodiment.
BRIEF DESCRIPTION OF THE DRAWING
The FIGURE shows the device in perspective and in partial section.
Disposed in a housing 1 which can be evacuated via connecting piece 2 is a
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Extended Abstracts of 1989 International Superconductivity Electronics Conference (ISEC '89), pp. 425-428.
Bueker Richard
Hoechst Aktiengesellschaft
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