Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Reexamination Certificate
2006-05-23
2006-05-23
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
C177S215000, C177S216000, C177S219000
Reexamination Certificate
active
07048799
ABSTRACT:
The device according to the present invention comprises a furnace (10) provided with heating means allowing said material to be crystallised to be rendered liquid, then to be cooled until it progressively solidifies. The device also comprises reception means (20) of the material (21) disposed in the furnace, fixed relative to the furnace and situated such that the material is in the intermediary zone. The heating means (11, 12, 13) supply three heating zones: a hot zone (16), an intermediary zone (15) and a cold zone (14). Thermally conductive means (17) are disposed between the reception means (20) and the heating means (11, 12, 13) and extend from the cold zone as far as the hot zone.
REFERENCES:
patent: 4264406 (1981-04-01), Hacskaylo
patent: 4551196 (1985-11-01), Capper et al.
patent: 4980133 (1990-12-01), Koch
patent: 4980433 (1990-12-01), Chen et al.
Commissariat a l''Energie Atomique
Hiteshew Felisa
Thelen Reid & Priest LLP
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