Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1996-11-21
1999-08-17
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117 30, 117 32, 117917, C30B 3500
Patent
active
059388412
ABSTRACT:
A novel device for producing a single crystal by the CZ or MCZ method is provided, which comprising a crucible for containing silicon melt therein, a wire reel and a wire for pulling a single crystal, a motor and a rotation shaft for rotating the crucible, a speed change device being inserted between the motor and the rotation shaft, and, if necessary, a magnetic field generator, by which the magnetic field is applied to the melt. According to the device for producing a single crystal, the rotation accuracy of a crucible can be improved, so that the concentrations of impurities in the pulled single crystal can be highly precisely controlled.
REFERENCES:
patent: 4436577 (1984-03-01), Frederick et al.
patent: 5178720 (1993-01-01), Frederick
patent: 5306387 (1994-04-01), Fusegawa et al.
patent: 5359954 (1994-11-01), Fusegawa et al.
patent: 5359959 (1994-11-01), Fusegawa et al.
V. R. Genrikhson et al., "Crucible Rotator With Acceleration", Instruments and Experimental Techniques, vol. 29, No. 2, Apr., 1986, pp. 507-508.
Araki Kenji
Fusegawa Izumi
Iino Eiichi
Kitagawa Kouji
Mizuishi Kouji
Hiteshew Felisa
Shin-Etsu Handotai & Co., Ltd.
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