Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2008-11-13
2011-11-08
Velez, Roberto (Department: 2858)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
C324S525000
Reexamination Certificate
active
08054096
ABSTRACT:
A microelectronic device comprising one or several metallic levels provided with one or several superposed metallic interconnecting levels and at least one test structure:at least one metallic zone formed in at least one insulating zone, the metallic zone comprising:at least one first metallic portion through which a current will be injected and at least one second metallic portion through which said current will be extracted,at least one third metallic portion that will act as a first voltage measurement point, and at least one fourth metallic portion that will act as a second measurement point for said voltage,a plurality of insulating islands incorporated in said metallic zone,said structure also comprising:a plurality of metallic islands incorporated in the insulating zone and distributed around said metallic zone.
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Guillaumond et al; “Analysis of resistivity in nano-interconnect: Full range (4.2-300K) temperature characterization”, Proc. of IITC 2003 conf., p. 132.
Van Der Pauw; “A Method of Measuring the Resistivity and Hall Coefficient on Lamellae of Arbitrary Shape”, Philips Technical Revue, vol. 20, No. 8, 1958 pp. 230-233.
Federspiel et al; “Accurate Method for Determination of Interconnect Cross Section”, 2005 IEEE, International Integrated Reliability Workshop 2005, pp. 133-134.
Van Der Pauw; “A Method of Measuring the Resistivity and Hall Coefficient on Lamellae of Arbitrary Shape”, Philips Research Reports, vol. 13, No. 1, 1958, pp. 1-9.
French Preliminary Search Report.
Commissariat a l''Energie Atomique
Pearne & Gordon LLP
Velez Roberto
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