Device for measuring high-level ionizing radiation dose

Details Device for measuring high-level ionizing radiation dose Device for measuring high-level ionizing radiation dose

1978-01-13

1979-04-03

Dixon, Harold A.

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

307308, 328144, G01T 122

Patent

active

041479343

ABSTRACT:
When the junction field effect transistor is irradiated by ionizing radiations from a radioactive material or a particle accelerator, defect centers are generated in the depletion layer near the channel layer. The defect centers introduce additional electron states in the forbidden gap of the semiconductor and these additional states cause a great increase of the noise voltage in the junction field effect transistor. The amount of ionizing radiations irradiated to the transistor is directly in proportion to the change of the square of the noise voltage caused by the defect centers. On the basis of this relationship, the dose of the irradiated ionizing radiation can be measured by finding the amount of this change in the square of noise voltage before and after irradiation of the ionizing radiation to the transistor.

REFERENCES:
patent: 2985805 (1961-05-01), Nelson et al.
patent: 3110806 (1963-11-01), Denney et al.
patent: 3433954 (1969-03-01), Bowman et al.
"Direct Measurement of Transistor Noise Voltage . . .", by Itoh & Knudsen , pp. 2-7 Hewlett-Packard Journal, Oct. 1969.
"Sources of Noise in Transistors", by Niladri Mantena, pp. 8-11, Hewlett-Packard Journal, Oct. 1969.

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