Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1994-04-05
1997-01-14
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257146, 257149, H01L 2910
Patent
active
055942610
ABSTRACT:
A monolithic semiconductor power switching device and a method of separating plural thyristor based active areas therein includes reverse conducting diode regions between the active areas. The reverse conducting diode regions influence current flow at the edges of the operable ones of the active areas so that current from an operable one of the active areas does not flow into and turn on an inoperable one of the active areas. The reverse conducting diode regions have a width so that substantially all of the carriers of the current from an operable one of the active areas recombine before reaching an adjacent active area.
REFERENCES:
patent: 5105244 (1992-04-01), Bauer
Johnson, et al. An Analysis of the Dynamic Behavior of Field Limiting Ring-Passivation Systems (pp. 1203-1211) Jun. 1989, vol. 36, No. 6, IEEE Transactions on Electron Devices.
Stoisiek, et al. A Large Area MOS-GTO With Wafer-Repair Technique (pp. 87-666-87-669) 1987 IEDM Technical Digest.
Stoisiek, et al. Power MOSFET's In Wafer Repair Technique (pp. 1397-1401) May 1990, vol. 37, No. 5 IEEE Transactions on Electron Devices.
Ronsisvalle, et al. High Power MOS-Controlled Thyristor Using the Parallel Contacting Technology for Devices on the Same Wafer (pp. 0-267 -0-269) EPE-MADEP Firenze 1991.
Crane Sara W.
Hardy David B.
Harris Corporation
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