Device for hybrid plasma processing

Details Device for hybrid plasma processing Device for hybrid plasma processing

2005-05-31

2005-05-31

Hassanzadeh, Parviz (Department: 1763)

Coating apparatus

Gas or vapor deposition

With treating means

C118S7230ER, C156S345410, C156S345430

Reexamination Certificate

active

06899054

ABSTRACT:
A device for hybrid plasma processing, particularly for deposition of thin films and for plasma treatment of samples, in a plasma reactor with pumping system characterized in that at least one feeder of microwave power (2) is installed in the plasma reactor (1) and connected to a microwave generator (3) for generation of a microwave plasma (4) in contact with at least one hollow cathode (5) in the plasma reactor, where the hollow cathode is powered from a cathode power generator (6). At least one inlet for a processing gas (7) is installed behind the hollow cathode and the gas is admitted into the plasma reactor through the hollow cathode where a hollow cathode plasma (9) is generated. A magnetic element (10) is used for generation of a perpendicular magnetic field (11) and/or a longitudinal magnetic field (12) at an outlet (13) from the hollow cathode.

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patent: 0 727 508 (1996-08-01), None
Bardos et al., “New microwave and hollow cathode hybrid plasma sources”, Surface and Coatings Technology 177-178 (2004), pp. 651-656.
Lejeune et al., “Rf multipolar plasma for broad and reactive ion beams”, Pergamon Journals Ltd., vol. 36, Nos. 11-12, pp. 837-840.
Bardos et al., “High Rate Jet Plasma-Assisted Chemical Vapour Deposition”, Thin Solid Films, 158 (1988), pp. 265-270.
Chris M. Horowitz, “Hollow cathode reactive sputter etching—A new high-rate process”, Appl. Phys. Lett. 43(10), Nov. 15, 1983, pp. 977-979.
Von A. Guntherschlze, Zeitschrift fur technische Physik Nr. 2, 1930, pp. 49-54.
Young H. Lee et al., “Plasma Enhanced Chemical Vapor Deposition of TiO2in Microwave-Radio Frequency Hybrid Plasma Reactor,”J. Vac. Sci. Technol., A 13(3), 1995, pp. 596-601.

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