Device for growing a crystalline layer on a substrate

Details Device for growing a crystalline layer on a substrate Device for growing a crystalline layer on a substrate

1980-06-16

1981-08-25

Garris, Bradley

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

422254, C30B 1530, C30B 3500

Patent

active

042859115

ABSTRACT:
A magnetic epitaxial layer containing the rare earths yttrium and samarium is grown on a gadolinium-gallium substrate which moves vertically in the melt during the growth process. The substrate remains immersed in a melt containing oxides of iron and the rare earths and while moving vertically in its own plane the substrate effectuates a translation movement with each point of the substrate describing a canted 8-shaped loop.

REFERENCES:
patent: 3228753 (1966-01-01), Larsen
patent: 3615262 (1971-10-01), Kappelmeyer
"New Method of Stirring for LPE Growth"; J. of Crystal Growth; vol. 31; No. 1; 1975.

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