Device for generating terahertz radiation, and a...

Coherent light generators – Particular resonant cavity – Specified cavity component

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C372S092000, C372S098000, C372S102000

Reexamination Certificate

active

07113534

ABSTRACT:
The invention relates to a device for generating terahertz (THz) radiation comprising a short pulse laser (1) with mode coupling to which a pump beam (3) is supplied, and comprising a semiconductor component equipped with a resonator mirror (M4). This semiconductor component serves to derive the THz radiation based on incident laser pulses. The resonator mirror (M4), preferably a resonator end mirror, is provided with a semiconductor layer (8), which is partially transparent to the laser radiation of the short pulse laser (1), whose absorption edge is lower than the energy of the laser radiation of the short pulse laser (1) and on which the electrodes (9, 10) that can be connected to a bias voltage source are placed in order to generate and radiate the THz radiation in the electric field.

REFERENCES:
patent: 4782222 (1988-11-01), Ragle et al.
patent: 5109203 (1992-04-01), Zucker et al.
patent: 5146075 (1992-09-01), Kim et al.
patent: 5148251 (1992-09-01), Kim et al.
patent: 5153442 (1992-10-01), Bovino et al.
patent: 5155352 (1992-10-01), Kim et al.
patent: 5177486 (1993-01-01), Kim et al.
patent: 5185586 (1993-02-01), Zucker
patent: 5262657 (1993-11-01), Kim et al.
patent: 5280168 (1994-01-01), Kim et al.
patent: 5283584 (1994-02-01), Kim et al.
patent: 5319218 (1994-06-01), Kim et al.
patent: 5332918 (1994-07-01), Smith et al.
patent: 5382788 (1995-01-01), Kim et al.
patent: 5432374 (1995-07-01), Norton
patent: 5663639 (1997-09-01), Brown et al.
patent: 5729017 (1998-03-01), Brener et al.
patent: H001717 (1998-04-01), Stoudt et al.
patent: 5773817 (1998-06-01), Kingsley et al.
patent: 5789750 (1998-08-01), Nuss
patent: 5844288 (1998-12-01), Mourou et al.
patent: 5912455 (1999-06-01), Pocholle et al.
patent: 5940424 (1999-08-01), Dietrich et al.
patent: 6344829 (2002-02-01), Lee
patent: 6400165 (2002-06-01), Knox et al.
patent: 6407708 (2002-06-01), Jasper, Jr.
patent: 6777684 (2004-08-01), Volkov et al.
patent: 6810062 (2004-10-01), Kuznetsov
patent: 6958853 (2005-10-01), Arnone et al.
patent: 2004/0228371 (2004-11-01), Kolodzey et al.
patent: 0 606 776 (1994-07-01), None
Liu et al., “THz Radiation from Intracavity Saturable Bragg Reflector in Magnetic Field with Self-Started Mode-Locking by Strained Saturable Bragg Reflector”, Jpn. J. Appl. Phys., vol. 38, No. 11b, pp. L1333-L1335, Nov. 15, 1999, XP002272906.
Brown E.R., “A Photoconductive Model for Superior GaAs Thz Photomixers”, Applied Physics Letters, American Institute of Physics., vol. 75, No. 6, pp. 769-771, Aug. 9, 1999, XP000877773.
Zhenlin Liu, et al., Efficient terahertz radiation generation from a bulk InAs mirror as an intracavity terahertz radiation emitter, Japanese Journal of Applied Physics., Part 2 (Letters), vol. 39, No. 4B, pp. L366-L-367, Apr. 15, 2000, XP002272907.
Nemec H., et al., “Study of carrier dynamics in LT GaAs by means of time-resolved emission terahertz spectroscopy”, Conference Digest 2000 International Quantum Electronics Conference, p. 154, Sep. 10, 2000, XP010540312.
Nemec H., et al., “Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy”,Journal of Applied Physics,vol. 90, No. 3, pp. 1303-1306, Aug. 1, 2001.
Nobuhiko Sarukura, et al.,All-Solid-State, THz Radiation Source Using a Saturable Bragg Reflector in a Femtosecond Mode-Locked Laser,Jpn. J. Appl. Phys. vol. 36 (1997) Pt. 2, No. 5A, pp. L560-L562.
Nobuhiko Sarukura, et al.,THz-radiation Generation from an Intracavity Saturable Bragg Reflector in a Magnetic Field,Jpn. J. Appl. Phys. vol. 37 (1998) pp. L125-L126.
Zhenlin Liu, et al.,Efficient Terahertz Radiation Generation from a Bulk InAs Mirror as an Intracavity Terahertz Radiation Emitter,Jpn. J. Appl. Phys. vol. 39 (2000) pp. L366-L367.
Tze-An Liu, et al.,High Average Power Mode Locked Ti: Sapphire Laser with Intracavity Continuous-Wave Amplifer and Strained Saturable Bragg Reflector,Jpn. J. Appl. Phys. vol. 38 (1999) pp. L1109-L1111.
Ch. Fattinger et al.,Terahertz Beams,Appl. Phys. Lett. 54(6), Feb. 6, 1989, pp. 490-492.
O. Mitrofanov, et al.,Thin terahertz detectors and emitters based on low temperature grown GaAs on sapphire,Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS vol. 39; IEEE Cat. No. 00CH37088. Opt. Soc. America, Salem, MA, USA; May 2000; pp. 528-529.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Device for generating terahertz radiation, and a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Device for generating terahertz radiation, and a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device for generating terahertz radiation, and a... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3576830

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.