Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-03-08
2005-03-08
Lee, John R. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S3960ML, C315S111210
Reexamination Certificate
active
06864495
ABSTRACT:
An ion beam generation device including an ion source, an extraction mechanism for ions emitted by the source, an accelerating mechanism of the ions thus extracted, a selector for the ions thus accelerated, and an electrostatic optical system for focusing the selected ions along a first axis. Further, a mechanism varies the distance between the ion source and the extraction means, this distance being counted along a second axis parallel to the first axis and constituting the axis of the ion beam emitted by the source. The device may be particularly applied to the manufacture of nanostructures.
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J Gierak et al.: “Design and realization of a very high-resolution FIB nanofabrication instrument” Nuclear Instruments & Methods in Physics Research, Section—A: Accelerators, Spectrometers, Detectors, and Associated Equipment, vol. 427, No. 1-2, pp. 91-98, May 11, 1999.
Gierak Jacques
Lagadec Yvon
Septier Albert
Centre National de la Recherche Scientifique
Hashmi Zia R.
Lee John R.
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