Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2005-10-25
2005-10-25
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C257S030000, C257S031000, C505S190000
Reexamination Certificate
active
06958487
ABSTRACT:
A mesa-shaped superconducting-superlattice structure is formed and adhered with epoxy onto a dielectric substrate where plural superconducting layers and plural insulating layers are naturally and alternately stacked. A λ/4 micro strip line (which means the length of the strip line is one-fourth of the wavelength of a microwave to be introduced) is electrically connected via a metallic film onto the mesa structural portion of the superconducting-superlattice structure, and a metallic electrode is electrically connected to the additional mesa structural portion of the superconducting-superlattice structure via a metallic film.
REFERENCES:
patent: 2001/0035524 (2001-11-01), Zehe
patent: 407235700 (1995-09-01), None
patent: A 7-235700 (1995-09-01), None
H.B. Wang et al., “Terhertz Responses of Intrinsic Josephson Junctions in High Tc Superconductors”, Physical Review Letters, vol. 27, No. 10, Sep. 3, 2001, pp. 107002-1-4.
Irie Akinobu
Oya Ginichiro
Mondt Johannes
Oliff & Berridg,e PLC
Tran Minhloan
Utsunomiya University
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