Device for forming silicon oxide film

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

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118715, 118724, 118725, C23C 1600

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active

054894468

ABSTRACT:
A device for forming a silicon oxide film comprises a quartz tube housing a substrate comprised of silicon, means for heating internally said quartz tube and means for delivering and flowing hydrogen gas and oxygen gas into said quartz tube to effect hydrogen combustion, wherein the gas introducing holes for selectively delivering and flowing either one of said gases are arranged in the neighborhood to each other while facing each other.

REFERENCES:
patent: 4133704 (1979-01-01), MacIver
patent: 4139658 (1979-02-01), Cohen
patent: 4168998 (1979-09-01), Hasegawa
patent: 4223048 (1980-09-01), Engle
Maliakal, Solid State Technology, Dec. 1984, pp. 105-109.
Wolf, Silicon Processing For the VLSI Era, vol. 1, Lattice Press.COPYRGT. 1986 pp. 30-31 and 230-233.

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