Coating apparatus – Gas or vapor deposition – With treating means
Patent
1991-12-19
1994-07-12
Thomas, Tom
Coating apparatus
Gas or vapor deposition
With treating means
118715, C23C 1648
Patent
active
053285140
ABSTRACT:
The invention provides a film-forming apparatus by a photo-CVD method comprising such essential structural elements as a light inlet in the form of a tube, a film-forming chamber, a light outlet in the form of a tube and a nozzle for feeding a mixture of a reactant and a gas for dilution so that a specific relation exists in the dimensions between the elements.
With this structure, the film-forming apparatus by a photo-CVD method prevents the blur of the laser beam-incoming window due to contaminants adhered thereto, thereby enabling the extension of reaction time, increase of the deposition, and formation of a film with uniform thickness, and making the composition of the film closest to the stoichiometric one.
REFERENCES:
patent: 4495218 (1985-01-01), Azuma et al.
patent: 4568565 (1986-02-01), Gupta et al.
patent: 5100832 (1992-03-01), Khagawa et al.
G. A. West et al., "Laser Induced Chemical Vapor Deposition of Titanium Silicide Films", Nov. 1985.
P. K. Beyer et al., "Laser Induced Chemical Vapor Deposition of SiO.sub.2 ", Apr. 1985.
Azuma Hideki
Inoue Naoki
Kobayashi Takashi
Morikawa Shigeru
Nakaoka Haruyuki
Baskin Jonathan D.
Osaka Gas Company Limited
Thomas Tom
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