Coating apparatus – Gas or vapor deposition – Crucible or evaporator structure
Patent
1994-02-14
1995-12-26
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Crucible or evaporator structure
118729, 118730, C23C 1400
Patent
active
054783984
ABSTRACT:
There is disclosed a device for forming a thin film on a substrate by irradiating a target of a compound oxide superconducting material with a laser beam and evaporating on the substrate a thin film corresponding to a composition of the target in an oxygen ambient atmosphere by laser evaporation, a scanning optical system for causing the laser beam to scan being disposed in an optical path of the laser beam.
REFERENCES:
patent: 4701592 (1987-10-01), Cheung
patent: 5122636 (1992-06-01), Jung
patent: 5124310 (1992-06-01), Ovshinsky
patent: 5206216 (1993-04-01), Yoshsida
Eryu et al, "Formation of High T.sub.c Superconducting Films by Laser Induced Fragments", Nuclear Instruments and Methods in Physics Research B, vol. 39, No. 1-4, Mar. 1989, Amsterdam, NL, pp. 640-643.
Patent Abstracts of Japan, vol. 13, No. 457, 16 Oct. 1989 & JP-A-1 177 367 (Semiconductor Energy Laboratory).
Patent Abstracts of Japan, vol. 15, No. 421 (C-878)25 Oct. 1991 & JP-A-3 174 307 (Chiyoudendou Hatsuden Kanren).
Miura S. et al, "Structure and Superconducting properties of Y1B.sub.a 2C.sub.u 307.delta. Films Prepared By Transversety Excited Atmospheric Pressure CO2 Pulsed Laser Evaporation", Applied Physics Letters, vol. 52, No. 12, 21 Mar. 1988, New York, U.S. pp. 1008-1010.
Muenchausen R. E. et al, "Effects of Beam Parameters on Excimer Laser Deposition of YBa.sub.2 Cu.sub.3 O.sub.7-.delta. ", Applied Physics Letters, vol. 56, No. 6, 5 Feb. 1990, New York, U.S., pp. 578-580.
Roas, Appl. Phys. Lett. 53(16), 17 Oct. 1988 pp. 1557-1559.
Dubowsli, "Pulsed Laser Evaporation and Epitaxy of Thin Semiconductor Films". Butterworth & Co., 1988.
Greer, Proceedings of the Third Anual Confrence on Superconductivity and Applications, Buffalo N.Y., Sep. 1989.
Wu, Appl. Phys. Lett. 56, (15), 9 Apr. 1990.
Singh, Appl. Phys. Lett. 54 (22), May 29, 1989, pp. 2271-2273.
Itozaki Hideo
Nakanishi Hidenori
Tanaka Saburo
Yazu Shuji
Bueker Richard
Sumitomo Electric Industries Ltd.
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