Device for forming a compound oxide superconducting thin film

Coating apparatus – Gas or vapor deposition – Crucible or evaporator structure

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118729, C23C 1400

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056931468

ABSTRACT:
There is disclosed a device for forming a thin film on a substrate by irradiating a target of a compound oxide superconducting material with a laser beam and evaporating on the substrate a thin film corresponding to a composition of the target in an oxygen ambient atmosphere by laser evaporation, a scanning optical system for causing the laser beam to scan being disposed in an optical path of the laser beam.

REFERENCES:
patent: 3616451 (1971-10-01), Gallez
patent: 4423701 (1984-01-01), Nath
patent: 4518078 (1985-05-01), Garrett
patent: 4529617 (1985-07-01), Chenevas-Paule
patent: 4701592 (1987-10-01), Cheung
patent: 5122636 (1992-06-01), Jung
patent: 5124310 (1992-06-01), Ovshinsky et al.
patent: 5147168 (1992-09-01), Suwa
patent: 5206216 (1993-04-01), Yoshida
Japanese Laid Open Patent Publ. No. 62-174370 to Mitsubishi dated Jul. 31, 1987.
Patent Abstract of Japan, vol. 13, No. 457, to Yamazaki daed Oct. 16, 1989 (relating to Japanese Laid Open Patent Publ. No. 1-177367 published Jul. 13, 1989).
Patent Abstract of Japan, vol. 15, No. 421, to Kazunori dated Oct. 25, 1991 (relating to Japanese Laid Open Patent Publ. No. 3-174307 published Jul. 29, 1991).
Miura et al., "Structure and Superconducting Properties of .sub.Y1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. Films Prepared by Transversely Excited Atmospheric Pressure CO.sub.2 Pulsed Laser Evaporation," Applied Physics Letters, vol. 52, No. 12, Mar 21, 1988, pp. 1008-1010.
Dubowski, "Pulsed Laser Evaporation and Epitaxy of Thin Semiconductor Films," 1988 Butterworth & Co., Publishers.
Roas, et al., "Epitaxial Growth of YBa.sub.2 Cu.sub.3 O.sub.7-x This Films by a Laser Evaporation Process," Applied Physics Letters, vol. 53, No. 16, Oct. 17, 1988, pp.1557-1559.
Eyru et al., "Formation of High T.sub.c Superconducting Films by Laser Induced Fragments," Nuclear Instrum. & Methods in Phys. Res., vol. B39, Nos. 1-4, Mar., 1989, pp. 640-643.
Singh et al., "In situ Processing of Epitaxial Y-Ba-Cu-O High T.sub.c Superconducting Films on (100) SrTiO.sub.3 and (100) YS-ZrO.sub.2 Substrates at 500-650.degree.C," Applied Physics Letters, vol. 54, No. 22, May 29, 1989, pp. 2271-2273.
Greer, "In-situ Growth ofY.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x Thin Films on Three-Inch Wafers Using Laser-Ablatio and an Atomic Oxygen Source," Third Annual Conference on Superconductivity, Buffalo, New York, Sep., 1989.
Muenchausen et al., "Effect of Beam Parameters on Excimer Laser Deposition of YBa.sub.2 Cu.sub.3 O.sub.7-.delta.," Applied Physics Letters, vol. 56, No. 6, Feb. 5, 1990, pp. 578-580.
Wu et al., "Effect of Deposition Rate on Properties of YBa.sub.2 Cu.sub.3 O.sub.7-.delta. Superconducting Thin Films," Applied Physics Letters, vol. 56, No. 15, Apr. 9, 1990, pp. 1481-1483.
Cheung, Appl. Phys. Lett.43(3) 1 Aug. 1983, pp. 255-257.

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